Search results for "Electromechanical behavior"
showing 4 items of 4 documents
Electrical conductance of carbon nanotubes with misaligned ends
2013
During a manufacturing process, when a straight carbon nanotube is placed on a substrate, e.g., production of transistors, its two ends are often misaligned. In this study, we investigate the effects of multiwall carbon nanotubes’ (MWCNTs) outer diameter and chirality on the change in conductance due to misalignment of the two ends. The length of the studied MWCNTs was 120 nm, while the diameters ranged between 4 and 7 nm. A mixed finite element-tight-binding approach was carefully designed to realize reduction in computational time by orders of magnitude in calculating the deformation-induced changes in the electrical transport properties of the nanotubes. Numerical results suggest that ar…
Electronic properties of carbon nanotubes under torsion
2012
A computationally-effective approach for calculating the electromechanical behavior of SWNTs and MWNTs of the dimensions used in nano-electronic devices has been developed. It is a mixed finite element-tight-binding code carefully designed to realize significant time saving in calculating deformation-induced changes in electrical transport properties of the nanotubes. The effect of the MWNT diameter and chirality on the conductance after mechanical deformation was investigated. In case of torsional deformation results revealed the conductance of MWNTs to depend strongly on the diameter, since bigger MWNTs reach much earlier the buckling load under torsion their electrical conductivity chang…
Effects of mechanical deformation on electronic transport through multiwall carbon nanotubes
2017
Abstract The effects of mechanical deformation on the electron transport behavior of carbon nanotubes (CNTs) are of primary interest due to the enormous potential of nanotubes in making electronic devices and nanoelectromechanical systems (NEMS). Moreover it could help to evaluate the presence of defects or to assess the type of CNTs that were produced. Conventional atomistic simulations have a high computational expense that limits the size of the CNTs that can be studied with this technique and a direct analysis of CNTs of the dimension used in nano-electronic devices seems prohibitive at the present. Here a novel approach was designed to realize orders-of-magnitude savings in computation…